Sti formation in semiconductor device including soi and bulk silicon regions

ABSTRACT

Methods for forming or etching silicon trench isolation (STI) in a silicon-on-insulator (SOI) region and a bulk silicon region, and a semiconductor device so formed, are disclosed. The STI can be etched simultaneously in the SOI and bulk silicon regions by etching to an uppermost silicon layer using an STI mask, conducting a timed etch that etches to a desired depth in the bulk silicon region and stops on a buried insulator of the SOI region, and etching through the buried insulator of the SOI region. The buried insulator etch for this process can be done with little complexity as part of a hardmask removal step. Further, by choosing the same depth for both the bulk and SOI regions, problems with a subsequent CMP process are avoided. The invention also cleans up the boundary between the SOI and bulk regions where silicon nitride residuals may exist.

BACKGROUND OF INVENTION

The present invention relates generally to shallow trench isolations(STI), and more particularly, to methods of forming an STI in asemiconductor device including a silicon-on-insulator (SOI) and bulksilicon regions.

As technologies become increasingly complex, demand for integratedcircuits (IC) customer having more functionality is growing. In order toprovide ICs with optimum designs, high-performance complementarymetal-oxide semiconductors (CMOS) devices are required with additionalfeatures such as enhanced dynamic random access memory (eDRAM) or radiofrequency (RF) applications. A challenge that arises relative toproviding all of these features is that each feature is optimized underdifferent conditions. For example, high-performance CMOS may becompleted on silicon on insulator (SOI) wafers but RF and eDRAM may bebuilt in bulk silicon.

Conventional techniques exist for making patterned SOI (part bulk andpart SOI) wafers for the purposes of merging the best of “bulktechnologies” with the best of “SOI technologies.” One such techniquethat utilizes this approach is integrating eDRAM in SOI. In this case,the eDRAM array blocks are built in bulk silicon and logic is built inthe SOI. Another technique that may use this approach is the emerging 65nm on SOI technology. Substrates at the 65 nm stage may be comprised ofNfets on SOI and Pfets in bulk silicon. This process technology isreferred to as “HOT” for Hybrid Orientation Technology.

One challenge facing both examples mentioned above is that fabricatorsmust provide isolation of active diffusions for both SOI and bulkregions. Conventional techniques for providing this isolation requiretwo separate shallow trench processes: one for the bulk silicon and onefor the SOI. The above-described process is very complicated andcost-ineffective. In particular, there are a number of challenges withshallow trench isolation (STI) processing relative to patterned SOIversus bulk silicon.

A first challenge relates to the depth of etching for the STI. For SOIregions, the depth of the STI etch is the thickness of the silicon andthe etch stops on top of the buried insulator, which is usually under1000A in depth. For bulk processes, however, the depth of the STI ismuch deeper than current SOI thickness, e.g., usually 3500A or deeper.When patterning the SOI, there are a few choices for selecting an STIetch depth relative to bulk silicon. A first choice is to use the SOISTI etch depth, which does not give enough isolation in the bulk area. Asecond choice is to use the bulk STI etch depth, which is a verydifficult etch to perform in the SOI region. A third choice is to havethe STI etch depth in the SOI region equal to the normal depth in theSOI STI process and have the bulk silicon region depth equal to thenormal bulk STI depth. This process, however, requires an extraphotoresist layer and is likely to cause problems with STIplanarization.

A second challenge with STI processing in patterned SOI arises from aparticular process defect that is intrinsic to wafers created by usingthe Separation by Implantation of Oxygen (SIMOX) process. In a patternedSIMOX process, oxide hardmask islands are initially created on a bulkwafer, shielding wafer regions from a high-dose, high-energy oxygenimplant. During the formation of the buried oxide (BOX), through ahigh-temperature oxidation procedure, the edges of the BOX (i.e., theBOX at the SOI-bulk boundary) become thicker than the BOX in the SOIfield regions. In many instances along the boundary of the SOI-bulkarea, the buried oxide actually breaches the surface of the wafer.Because an oxide etch is needed to remove the oxide that is grown on aSIMOX wafer, those areas where the buried oxide breaches the surface arealso etched away leaving small divots on the wafer surface. The wafersthen go through pad oxidation and pad silicon nitride (SiN) deposition.In the SiN deposition process, these holes become filled with nitrideand can remain on the patterned wafer throughout most of the STIprocessing if they are not etched during the STI etch process. Once STIhas been filled and planarized, pad SiN needs to be stripped off thewafer surface. Divots which form near the surface that have SiN pluggedinto them become free of SiN after etching, and will remain free ofmaterial until the next deposition step, i.e., gate polysilicon. Sincepolysilicon can be made electrically active either by doping orconversion to silicide divots filled with polysilicon can cause deviceshorting. This problem has been observed in early SOI eDRAM hardware.Thus, patterned SIMOX wafers must incorporate a process whereby nitrideresiduals lying in sub-surface divots are removed completely.

In view of the foregoing, there is a need in the art for a process theaddresses the problems of the related art.

SUMMARY OF INVENTION

The invention includes methods for forming or etching silicon trenchisolation (STI) in a silicon-on-insulator (SOI) region and a bulksilicon region, and a semiconductor device so formed. The STI can beetched simultaneously in the SOI and bulk silicon regions by etching toan upper-most silicon layer using an STI mask, conducting a timed etchthat etches to a desired depth in the bulk silicon region and stops on aburied insulator of the SOI region, and etching through the buriedinsulator of the SOI region. The buried insulator etch for this processcan be done with little complexity as part of a hardmask removal step.Further, by choosing the same depth for both the bulk and SOI regions,problems with a subsequent CMP process are avoided. The invention alsocleans up the boundary between the SOI and bulk regions where siliconnitride residuals may exist.

A first aspect of the invention is directed to a method for forming asilicon trench isolation (STI) in a device including asilicon-on-insulator (SOI) region and a bulk silicon region, the methodcomprising the steps of: etching to an uppermost silicon layer using anSTI mask; conducting a timed etch that etches to a desired depth in thebulk silicon region and stops on a buried insulator of the SOI region;etching through the buried insulator of the SOI region; and depositingan STI material to form the STI.

A second aspect of the invention is directed to a method for etching asilicon trench isolation (STI) in a mixed silicon-on-insulator (SOI)region and a bulk silicon region device, the method comprising the stepsof: etching to an uppermost silicon layer using an STI mask; conductinga timed etch that etches to a desired depth in the bulk silicon regionand stops on a buried insulator of the SOI region; and etching throughthe buried insulator of the SOI region.

A third aspect of the invention is directed to a semiconductor deviceincluding a silicon-on-insulator (SOI) region and a bulk silicon region,the semiconductor device comprising: a silicon trench isolation (STI)extending to a depth substantially equal to a thickness of a siliconlayer and a buried insulator of the SOI region.

A fourth aspect of the invention is directed to a method for forming asilicon trench isolation (STI) in a device including asilicon-on-insulator (SOI) region and a bulk silicon region, the methodcomprising the steps of: providing an STI mask; and simultaneouslyforming the STI in the SOI region and the bulk silicon region.

The foregoing and other features of the invention will be apparent fromthe following more particular description of embodiments of theinvention.

BRIEF DESCRIPTION OF DRAWINGS

The embodiments of this invention will be described in detail, withreference to the following figures, wherein like designations denotelike elements, and wherein:

FIG. 1 shows a cross-sectional view of a wafer prior to application ofthe invention.

FIGS. 2-6 show cross-sectional views of methods of forming an STI oretching for an STI of the invention.

FIG. 7 shows a cross-sectional view of a semiconductor device of theinvention.

DETAILED DESCRIPTION

With reference to the accompanying drawings, FIG. 1 illustrates across-sectional view of a typical wafer 10 after deep trench 12formation in a bulk silicon region 14, and prior to the silicon trenchisolation (STI) hardmask deposition. Wafer 10 includes asilicon-on-insulator (SOI) region 20 including a silicon layer 22 on aburied insulator 24. Also included on wafer 10 is a pad layer 30 of, forexample, silicon nitride and silicon dioxide.

In one embodiment, buried insulator 24 material is silicon dioxide, butother materials may also be used. For purpose of illustration only,silicon layer 22 of SOI region 20 may have a thickness of approximately700A and buried insulator 24 of SOI region 20 may have a thickness ofapproximately 1350A. Pad layer 30 may have a thickness includingapproximately 80A of silicon dioxide (not shown due to scale) andapproximately 1200A of silicon nitride. It should be recognized,however, that the teachings of the invention are not limited to theseparticular depths or the initial structural starting point of FIG. 1.

As shown in FIGS. 2-3, an STI mask is provided. In particular, as shownin FIG. 2, a hardmask layer 40 is deposited on top of pad layer 30, andinto any openings. Hardmask layer 40 material has substantially the sameetch characteristics as buried insulator 24. In one embodiment,hard-mask layer 40 includes approximately 1000A of tetraethylorthosilicate (TEOS) or boron-doped silicate glass (BSG). Next as shownin FIG. 3, hardmask layer 40 is patterned and an etch 42 is conducted toform STI mask 46. Etch 42 extends through hardmask layer 40 and at leastone of an antireflective coating (ARC)(not shown) and pad layer 30,stopping on an uppermost silicon layer 50, i.e., an upper-most surfaceof bulk silicon region 14 and silicon layer 22 of SOI region 20.

In a next step, shown in FIG. 4, a timed etch 50 is conducted thatetches to a desired depth (D) in bulk silicon region 14 and stops on anuppermost surface 52 of buried insulator 22 of SOI region 20. In oneembodiment, the desired depth D (and hence, the later formed STI) inbulk silicon region 14 will extend to a depth at least as thick as SOIregion 20, i.e., to at least the depth of silicon layer 22 and buriedinsulator 34. Based on the illustrative depths above, the desired depthmay be, for example, approximately 2050A, i.e., 700A of silicon layer 22plus the 1350A of buried insulator 24. In one embodiment, timed etch 50can be a reactive ion etch process, however, other etching processes maybe implemented. In any event, timed etch 50 is selective to buriedinsulator 24 material, e.g., silicon dioxide, and etches both siliconlayer 22 and any silicon nitride that could be below silicon layer 22due to buried insulator 24 coming to the surface during the SOIformation process. This step also cleans a boundary 76 between SOIregion 20 and bulk silicon region 14 where silicon nitride residuals mayexist.

Referring to FIG. 5, a next step includes conducting an etch 60 throughburied insulator 24 of SOI region 20. In a preferred embodiment, etch 60is provided as part of a hardmask layer 40 (FIG. 3) removal etch. Etch60 etches both hardmask layer 40 and buried insulator 24 material thatis exposed. Etch 60, however, does not etch any exposed silicon,polysilicon or silicon nitride. That is, the etching recipe is incapableof etching any exposed silicon, polysilicon and silicon nitride.

Referring to FIG. 6, the next step includes depositing an STI material70 to form STI 72. As shown in FIGS. 6-7, final processing may includeconducting conventional high performance CMOS or DRAM technologypolishing (in FIG. 6) to remove STI material 70 above an uppermostsurface, and conducting a pad layer 30 (FIG. 6) strip to arrive at asemiconductor device 100, as shown in FIG. 7. Semiconductor device 100includes an STI 72 that extends to a depth substantially equal to thethickness of silicon layer 22 and buried insulator 24 of SOI region 20.Where desired depth D (FIG. 4) is substantially equal to a thickness ofsilicon layer 22 and buried insulator 24 of SOI region 20, STI 72extends to a substantially equal depth in SOI region 20 and bulk siliconregion 14. The etching depth provides bulk silicon region 14 moreisolation than just stopping at silicon layer 22 thickness of SOI region20.

While this invention has been described in conjunction with the specificembodiments outlined above, it is evident that many alternatives,modifications and variations will be apparent to those skilled in theart. Accordingly, the embodiments of the invention as set forth aboveare intended to be illustrative, not limiting. Various changes may bemade without departing from the spirit and scope of the invention asdefined in the following claims.

1. A method for forming a silicon trench isolation (STI) in a deviceincluding a silicon-on-insulator (SOI) region and a bulk silicon region,the method comprising the steps of: etching to an uppermost siliconlayer using an STI mask; conducting a timed etch that etches to adesired depth in the bulk silicon region and stops on a buried insulatorof the SOI region; etching through the buried insulator of the SOIregion; and depositing an STI material to form the STI.
 2. The method ofclaim 1, wherein the desired depth in the bulk silicon region is atleast as thick as a silicon layer and the buried insulator of the SOIregion.
 3. The method of claim 1, further comprising the step of formingthe STI mask by depositing a hardmask layer, patterning and etching toform the STI mask.
 4. The method of claim 3, wherein the hardmask layerincludes tetraethyl orthosilicate (TEOS).
 5. The method of claim 3,wherein the STI mask etching step includes etching through the hardmasklayer and at least one of any anti-reflective coating (ARC) and a padlayer.
 6. The method of claim 1, wherein the timed etching step includesusing an etching recipe that is selective to the buried insulatormaterial.
 7. The method of claim 1, wherein the timed etching stepremoves any silicon nitride below a silicon layer of the SOI region. 8.The method of claim 1, wherein the buried insulator etching stepincludes removing the STI mask.
 9. The method of claim 1, wherein theburied insulator etching step includes using an etching recipe incapableof etching any exposed silicon, polysilicon and silicon nitride.
 10. Themethod of claim 1, further comprising the steps of polishing to removethe STI material above an uppermost surface, and removing a pad layer.11. A method for etching a silicon trench isolation (STI) in a mixedsilicon-on-insulator (SOI) region and a bulk silicon region device, themethod comprising the steps of: etching to an uppermost silicon layerusing an STI mask; conducting a timed etch that etches to a desireddepth in the bulk silicon region and stops on a buried insulator of theSOI region; and etching through the buried insulator of the SOI region.12. The method of claim 11, wherein the desired depth in the bulksilicon region is at least as thick as a silicon layer and the buriedinsulator of the SOI region.
 13. The method of claim 11, furthercomprising the step of forming the STI mask by depositing a hardmasklayer, and patterning and etching to form the STI mask.
 14. The methodof claim 13, wherein the hardmask layer includes tetraethylorthosilicate (TEOS).
 15. The method of claim 13, wherein the STI masketching step includes etching through the hardmask layer and at leastone of an anti-reflective coating (ARC) and a pad layer.
 16. The methodof claim 11, wherein the buried insulator etching step also includesremoving the STI mask.
 17. The method of claim 11, wherein the timedetching step includes using an etching recipe that is selective to theburied insulator material.
 18. The method of claim 11, wherein the timedetching step includes removing any silicon nitride below a silicon layerof the SOI region.
 19. The method of claim 11, wherein the buriedinsulator etching step also includes removing an STI mask.
 20. Themethod of claim 11, wherein the buried insulator etching step includesusing an etching recipe incapable of etching any exposed silicon,polysilicon and silicon nitride.
 21. The method of claim 11, furthercomprising the steps of polishing to remove the STI material above anuppermost surface, and removing a pad layer.
 22. A semiconductor deviceincluding a silicon-on-insulator (SOI) region and a bulk silicon region,the semiconductor device comprising: a silicon trench isolation (STI)extending to a depth substantially equal to a thickness of a siliconlayer and a buried insulator of the SOI region.
 23. The semiconductordevice of claim 22, wherein the STI extends to a substantially equaldepth in the SOI region and the bulk silicon region.
 24. Thesemiconductor device of claim 22, wherein the STI extends through asilicon layer and a buried insulator of the SOI region.
 25. A method forforming a silicon trench isolation (STI) in a device including asilicon-on-insulator (SOI) region and a bulk silicon region, the methodcomprising the steps of: providing an STI mask; and simultaneouslyforming the STI in the SOI region and the bulk silicon region.
 26. Themethod of claim 25, wherein the forming step includes: etching to anuppermost silicon layer using the STI mask; conducting a timed etch thatetches to a desired depth in the bulk silicon region and stops on aburied insulator of the SOI region; etching through the buried insulatorof the SOI region; and depositing an STI material to form the STI. 27.The method of claim 26, wherein the desired depth in the bulk siliconregion is at least as thick as a silicon layer and the buried insulatorof the SOI region.
 28. The method of claim 26, wherein the timed etchingstep includes using an etching recipe that is selective to the buriedinsulator material.
 29. The method of claim 26, wherein the timedetching step removes any silicon nitride below a silicon layer of theSOI region.
 30. The method of claim 1, wherein the buried insulatoretching step includes using an etching recipe incapable of etching anyexposed silicon, polysilicon and silicon nitride.